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2N5770
Central SemiconductorRoHS
/
Package TO-92
Category Transistors - Bipolar (BJT) - RF / Transistors - Bipolar (BJT) - RF
Description
TO-92 Through Hole Single ULTRA HIGH FREQUENCY B RF Transistor 50mA 625mW 900MHz 30V
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Inventory: 6250
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.1387
≥1 USD $0.1387
≥500 USD $0.114
≥1000 USD $0.1102
≥2000 USD $0.1064
≥5000 USD $0.10355
≥10000 USD $0.09215
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Package / Case TO-92
Technical
Published 2008
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.21.00.75
Subcategory Other Transistors
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Power Dissipation-Max 625mW
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 900MHz
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 900MHz
Collector Emitter Saturation Voltage 400mV
Frequency - Transition 900MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
hFE Min 20
DC Current Gain-Min (hFE) 50
Continuous Collector Current 50mA
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.7pF
Compliance
RoHS Status RoHS Compliant
Alternative Model
No data
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