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IDT71016S20Y
Integrated Device Technology (IDT)RoHS
/
Package /
Category Memory / Memory
Description
J BEND 3-STATE 2006 Parallel (Memory Format) Memory 70C 4.5V 1048576bit 0.01A
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Inventory: 5412
Minimum: 1
Total Price: USD $0.53
Unit Price: USD $0.53024
≥1 USD $0.53024
≥10 USD $0.50023
≥100 USD $0.47191
≥500 USD $0.4452
≥1000 USD $0.42
≥3000 USD $0.39623
Technical Details
Physical
Surface Mount YES
Number of Pins 44
Technical
Published 2006
JESD-609 Code e0
Pbfree Code no
Moisture Sensitivity Level (MSL) 3
Number of Terminations 44
ECCN Code 3A991.B.2.B
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 5V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 44
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 5.5V
Power Supplies 5V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 4.5V
Interface Parallel
Number of Ports 1
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.17mA
Organization 64KX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.01A
Memory Density 1048576 bit
Access Time (Max) 20 ns
I/O Type COMMON
Standby Voltage-Min 4.5V
Output Enable YES
Compliance
RoHS Status Non-RoHS Compliant
Dimensions
Height Seated (Max) 3.683mm
Length 28.575mm
Width 10.16mm
Alternative Model
No data
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