JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1
Number of Terminations 3
ECCN Code EAR99
Resistance 250MOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 540mW
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540mW
Turn On Delay Time 2.5 ns
Transistor Application SWITCHING
Rise Time 9.5ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 4.8 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 250mOhm
Rds On Max 250 mΩ
Capacitance - Input 110pF