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HFA3102BZ
Intersil (Renesas Electronics America)RoHS
/
Package SOIC
Category Transistors - Bipolar (BJT) - RF / Transistors - Bipolar (BJT) - RF
Description
Bulk Surface Mount COMPLEX 14 RF Transistor 30mA 250mW 17.5dB 10GHz
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Inventory: 3427
Minimum: 1
Total Price: USD $5.96
Unit Price: USD $5.957789
≥1 USD $5.957789
≥10 USD $5.620553
≥100 USD $5.302413
≥500 USD $5.00228
≥1000 USD $4.719125
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Packaging Bulk
Published 2000
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 14
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Additional Feature AGC CIRCUIT
Subcategory Other Transistors
Voltage - Rated DC 8V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 30mA
Frequency 10GHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 14
Number of Elements 6
Polarity NPN
Configuration COMPLEX
Power Dissipation-Max 250mW
Power Dissipation 250mW
Frequency (Max) 10GHz
Transistor Application AMPLIFIER
Gain Bandwidth Product 10 GHz
Collector Emitter Voltage (VCEO) 8V
Max Collector Current 30mA
JEDEC-95 Code MS-012AB
Collector Emitter Breakdown Voltage 12V
Gain 17.5 dB
Transition Frequency 10000MHz
Max Breakdown Voltage 12V
Frequency - Transition 10GHz
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 30mA
Alternative Model
No data
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