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2N2218A
Central SemiconductorRoHS
/
Package TO-39
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TO-39 Through Hole Single 3 Bipolar (BJT) Transistor 800mA 800mW 250MHz 285ns
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Inventory: 5761
Minimum: 1
Total Price: USD $1.46
Unit Price: USD $1.4649
≥1 USD $1.4649
≥10 USD $1.20175
≥100 USD $1.1647
≥500 USD $1.1267
≥1000 USD $1.08965
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Package / Case TO-39
Compliance
RoHS Status RoHS Compliant
Technical
Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.21.00.75
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Power Dissipation-Max 800mW
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 1V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 20
DC Current Gain-Min (hFE) 40
Turn Off Time-Max (toff) 285ns
Turn On Time-Max (ton) 35ns
Alternative Model
No data
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