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IDT71V016SA12Y

Integrated Device Technology (IDT)
RoHS
/
Package /
Category Memory / Memory
Description J BEND 3-STATE 2007 Parallel (Memory Format) Memory 70C 3V 1048576bit 0.01A
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Inventory: 1402
Minimum: 1
Total Price: USD $2.77
Unit Price: USD $2.76545
≥1 USD $2.76545
≥10 USD $2.26955
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.05675

Technical Details

Physical

Surface Mount YES
Number of Pins 44

Technical

Published 2007
JESD-609 Code e0
Pbfree Code no
Moisture Sensitivity Level (MSL) 3
Number of Terminations 44
ECCN Code 3A991.B.2.B
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 44
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 3V
Interface Parallel
Number of Ports 1
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.15mA
Organization 64KX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.01A
Memory Density 1048576 bit
Access Time (Max) 12 ns
I/O Type COMMON
Standby Voltage-Min 3.15V
Output Enable YES

Dimensions

Height Seated (Max) 3.683mm
Length 28.575mm
Width 10.16mm

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

No data

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