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IPW90R120C3
InfineonRoHS
/
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
INFINEON - IPW90R120C3 - Power MOSFET, N Channel, 900 V, 36 A, 0.1 ohm, TO-247, Through Hole
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Inventory: 9839
Minimum: 1
Total Price: USD $24.16
Unit Price: USD $24.16325
≥1 USD $24.16325
≥10 USD $19.8265
≥100 USD $19.2071
≥500 USD $18.5877
≥1000 USD $17.96735
Technical Details
Physical
Contact Plating Tin
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Technical
Pbfree Code yes
Number of Terminations 3
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Pin Count 3
Number of Elements 1
Power Dissipation-Max 417W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 417W
Turn On Delay Time 70 ns
Voltage - Threshold 3V
Transistor Application SWITCHING
Rise Time 20ns
Drain to Source Voltage (Vdss) 900V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 24 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 96A
Dual Supply Voltage 900V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 120mOhm
Rds On Max 120 mΩ
Nominal Vgs 3 V
Capacitance - Input 6.8nF
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 21.1mm
Length 16.13mm
Width 5.21mm
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