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IDT71V124SA10TY8
Integrated Device Technology (IDT)RoHS
/
Package /
Category Memory / Memory
Description
J BEND 3-STATE 2007 Parallel (Memory Format) Memory 70C 3.15V 1048576bit 0.01A
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Inventory: 7752
Minimum: 1
Total Price: USD $10.44
Unit Price: USD $10.4443
≥1 USD $10.4443
≥10 USD $8.56995
≥100 USD $8.30205
≥500 USD $8.03415
≥1000 USD $7.76625
Technical Details
Physical
Surface Mount YES
Number of Pins 32
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Pbfree Code no
Moisture Sensitivity Level (MSL) 3
Number of Terminations 32
ECCN Code 3A991.B.2.B
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 32
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 3.15V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.145mA
Organization 128KX8
Output Characteristics 3-STATE
Memory Width 8
Standby Current-Max 0.01A
Memory Density 1048576 bit
Access Time (Max) 10 ns
I/O Type COMMON
Standby Voltage-Min 3.15V
Dimensions
Height Seated (Max) 3.7592mm
Length 20.955mm
Width 7.62mm
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
No data
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