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2N7008-G
Microchip TechnologyRoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT MODE,60V,7.5 Ohm3 TO-92BAG
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Inventory: 2437
Minimum: 1
Total Price: USD $0.65
Unit Price: USD $0.65231
≥1 USD $0.65231
≥10 USD $0.615387
≥100 USD $0.580555
≥500 USD $0.5477
≥1000 USD $0.516694
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Tj
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±30V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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