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BUK9675-100A,118

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 23A D2PAK
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Inventory: 1570
Minimum: 1
Total Price: USD $1.28
Unit Price: USD $1.278546
≥1 USD $1.278546
≥10 USD $1.206183
≥100 USD $1.137907
≥500 USD $1.073491
≥1000 USD $1.012731

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 99W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 98W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1704pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.084Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 91A
Avalanche Energy Rating (Eas) 100 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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