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IPD70N03S4L04ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
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Inventory: 950
Minimum: 1
Total Price: USD $7.92
Unit Price: USD $7.92015
≥1 USD $7.92015
≥10 USD $6.49895
≥100 USD $6.29565
≥500 USD $6.09235
≥1000 USD $5.89
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 2.2V @ 30μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 70A
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 57 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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