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SI2347DS-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3
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Inventory: 3815
Minimum: 5
Total Price: USD $2.01
Unit Price: USD $0.4028
≥5 USD $0.4028
≥50 USD $0.3306
≥150 USD $0.32015
≥500 USD $0.31065
≥3000 USD $0.3002
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 5A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Dimensions
Height 1.12mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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