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2N7000-D26Z
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
ON SEMICONDUCTOR - 2N7000-D26Z - MOSFET, N CH, 60V, 0.2A, TO-92
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Inventory: 8518
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.241251
≥1 USD $0.241251
≥10 USD $0.227596
≥100 USD $0.214712
≥500 USD $0.202564
≥1000 USD $0.191089
Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2N7000
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 400mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 5Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 5 pF
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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