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Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 55V 42A D2PAK
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Inventory: 9397
Minimum: 1
Total Price: USD $0.81
Unit Price: USD $0.81177
≥1 USD $0.81177
≥10 USD $0.76582
≥100 USD $0.72247
≥500 USD $0.68158
≥1000 USD $0.643
Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier D2Pak
Dimensions
Height 4.83mm
Length 10.54mm
Width 10.54mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 20mOhm
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -74A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 99 ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) -42A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 280A
Dual Supply Voltage -55V
Recovery Time 92 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -4 V
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