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IRF530PBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 14A TO-220AB
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Inventory: 8807
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥50 USD $0.4275
≥100 USD $0.41325
≥500 USD $0.39995
≥1000 USD $0.35815

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 160mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 14A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Power Dissipation 88W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 670pF
Recovery Time 280 ns
Drain to Source Resistance 270mOhm
Rds On Max 160 mΩ
Nominal Vgs 4 V

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