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FDMC86570L

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description PT7 N-ch 60/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
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Inventory: 7027
Minimum: 1
Total Price: USD $6.44
Unit Price: USD $6.44385
≥1 USD $6.44385
≥10 USD $5.2877
≥100 USD $5.1224
≥500 USD $4.9571
≥1000 USD $4.7918

Technical Details

Supply Chain

Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.3W Ta 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6705pF @ 30V
Current - Continuous Drain (Id) @ 25°C 18A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 1.8V
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 56A
Drain-source On Resistance-Max 0.0043Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 253 mJ
Max Junction Temperature (Tj) 150°C

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 152.7mg
Transistor Element Material SILICON

Dimensions

Height 800μm
Length 3.4mm
Width 3.4mm

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