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STP3N80K5
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 2.5A TO220
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Inventory: 1915
Minimum: 1
Total Price: USD $8.51
Unit Price: USD $8.51105
≥1 USD $8.51105
≥10 USD $6.98345
≥100 USD $6.76495
≥500 USD $6.5474
≥1000 USD $6.3289
Technical Details
Supply Chain
Lifecycle Status NRND (Last Updated: 7 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STP3N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Rise Time 7.5ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 20.5 ns
Continuous Drain Current (ID) 2.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 65 mJ
Dimensions
Height 15.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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