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IRF830SPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 4.5A D2PAK
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Inventory: 987
Minimum: 1
Total Price: USD $0.97
Unit Price: USD $0.96805
≥1 USD $0.96805
≥10 USD $0.7942
≥100 USD $0.7695
≥500 USD $0.7448
≥1000 USD $0.7201
Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 1.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 74W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Input Capacitance 610pF
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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