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FDP8874
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 114A TO-220AB
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Inventory: 6417
Minimum: 1
Total Price: USD $27.7
Unit Price: USD $27.70295
≥1 USD $27.70295
≥10 USD $22.73065
≥100 USD $22.02005
≥500 USD $21.30945
≥1000 USD $20.5998
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Dimensions
Height 9.4mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 121A
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 114A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 128ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 114A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0066Ohm
Drain to Source Breakdown Voltage 30V
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