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TP0620N3-G
Microchip TechnologyRoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 200V 0.175A TO92-3
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Inventory: 5473
Minimum: 1
Total Price: USD $1.45
Unit Price: USD $1.45445
≥1 USD $1.45445
≥10 USD $1.1932
≥100 USD $1.15615
≥500 USD $1.11815
≥1000 USD $1.0811
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 219.992299mg
Transistor Element Material SILICON
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 12Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 175mA Tj
Rise Time 15ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) -175mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
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