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IRFBA90N20DPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-273AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 98A SUPER-220
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Inventory: 1436
Minimum: 1
Total Price: USD $8.49
Unit Price: USD $8.489599
≥1 USD $8.489599
≥10 USD $8.009051
≥100 USD $7.555711
≥500 USD $7.128031
≥1000 USD $6.724556
Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 23Ohm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 98A
Number of Elements 1
Power Dissipation-Max 650W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 650W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 59A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 98A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 98A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 95A
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 960 mJ
Nominal Vgs 5 V
Dimensions
Height 15.0114mm
Length 10.9982mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-273AA
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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