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IPP60R180C7XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 13A TO220-3
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Inventory: 6876
Minimum: 1
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS? C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 68W Tc
Power Dissipation 68W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 260μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 400V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.08nF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 155mOhm
Rds On Max 180 mΩ
Dimensions
Height 20.7mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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