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NTZS3151PT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 0.86A SOT-563
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Inventory: 10795
Minimum: 5
Total Price: USD $0.55
Unit Price: USD $0.10925
≥5 USD $0.10925
≥50 USD $0.09025
≥150 USD $0.0874
≥500 USD $0.08455
≥2500 USD $0.0817
≥4000 USD $0.07315
Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 150mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -950mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 170mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 170mW
Turn On Delay Time 5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 458pF @ 16V
Current - Continuous Drain (Id) @ 25°C 860mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 23.7 ns
Continuous Drain Current (ID) -950mA
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -1 V
Dimensions
Height 600μm
Length 1.7mm
Width 1.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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