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IXTA3N120
IXYSRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263
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Inventory: 9522
Minimum: 1
Total Price: USD $2.12
Unit Price: USD $2.12096
≥1 USD $2.12096
≥10 USD $2.00091
≥100 USD $1.88765
≥500 USD $1.7808
≥1000 USD $1.68
≥3000 USD $1.58491
Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263 (IXTA)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Technology MOSFET (Metal Oxide)
Current Rating 3A
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Power Dissipation 150W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1.1kV
Input Capacitance 1.35nF
Drain to Source Resistance 4.5Ohm
Rds On Max 4.5 Ω
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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