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IPP65R045C7XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 46A Tube
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Inventory: 6393
Minimum: 1
Total Price: USD $180.93
Unit Price: USD $180.9256
≥1 USD $180.9256
≥10 USD $162.20965
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS? C7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 227W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 46A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.045Ohm
Avalanche Energy Rating (Eas) 249 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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