Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IPW60R080P7XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 37A TO247-3
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 3130
Minimum: 1
Total Price: USD $109.89
Unit Price: USD $109.8884
≥1 USD $109.8884
≥10 USD $106.34395
≥100 USD $102.79855
≥500 USD $92.16425
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS? P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 129W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590μA
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 400V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 118 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You