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RN1404S,LF
Toshiba Semiconductor and StorageRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 200mW 4.7k
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Inventory: 5646
Minimum: 1
Total Price: USD $8.9
Unit Price: USD $8.90435
≥1 USD $8.90435
≥10 USD $7.30645
≥100 USD $7.07845
≥500 USD $6.8495
≥1000 USD $6.6215
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Compliance
RoHS Status RoHS Compliant
Technical
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number RN140*
JESD-30 Code R-PDSO-G3
Number of Elements 1
Polarity NPN
Configuration SINGLE WITH BUILT-IN RESISTOR
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 47 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Alternative Model
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