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PDTD123YT,215
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS NPN 250MW TO236AB
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Inventory: 890
Minimum: 10
Total Price: USD $0.69
Unit Price: USD $0.06935
≥10 USD $0.06935
≥100 USD $0.057
≥300 USD $0.0551
≥3000 USD $0.0532
≥6000 USD $0.05225
≥9000 USD $0.04655
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Technical
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.21
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTD123
Pin Count 3
Max Output Current 500A
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1mm
Length 3mm
Width 1.4mm
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