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DTC143EUAT106

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 200MW UMT3
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Inventory: 1360
Minimum: 20
Total Price: USD $0.44
Unit Price: USD $0.02185
≥20 USD $0.02185
≥200 USD $0.01805
≥600 USD $0.0171

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTC143
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 30
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 4.7 k Ω

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