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DDTA114ECA-7-F

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
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Inventory: 18000
Minimum: 3000
Total Price: USD $91.2
Unit Price: USD $0.0304
≥3000 USD $0.0304

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg

Dimensions

Height 1mm
Length 3.05mm
Width 1.4mm

Technical

Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -50mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DDTA114
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) -3V
hFE Min 30
Resistor - Base (R1) 10 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 10 k Ω

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

PDTC144WE,115
Rochester Electronics, LLC

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