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MUN2214T1

ON Semiconductor
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Cut Tape (CT) Surface Mount NPN - Pre-Biased Single Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V 100mA 338mW 50V
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Total Price: USD $0.18
Unit Price: USD $0.179021
≥1 USD $0.179021
≥10 USD $0.168886
≥100 USD $0.159329
≥500 USD $0.15031
≥1000 USD $0.141804

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 338mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUN2214
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω

Alternative Model

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