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PDTC114EK,115
NXP USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Tape & Reel (TR) Surface Mount NPN SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 30 @ 5mA 5V 100mA 250mW 50V
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Pricing & Ordering
Inventory: 7422
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.07862
≥1 USD $0.07862
≥200 USD $0.03137
≥500 USD $0.030322
≥1000 USD $0.029803
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PDTC114
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Power Dissipation-Max (Abs) 0.25W
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Alternative Model
No data
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