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PDTA114YU,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SC-70, SOT-323
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS PNP 200MW SOT323
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Inventory: 2040
Minimum: 10
Total Price: USD $3.14
Unit Price: USD $0.31445
≥10 USD $0.31445
≥100 USD $0.2584
≥300 USD $0.24985
≥3000 USD $0.24225
≥6000 USD $0.2337
≥9000 USD $0.20995
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 70
Technical
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTA114
Pin Count 3
JESD-30 Code R-PDSO-G3
Max Output Current 100mA
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) -10V
hFE Min 100
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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