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RN1409,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
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Inventory: 4850
Minimum: 1
Total Price: USD $25.25
Unit Price: USD $25.251
≥1 USD $25.251
≥200 USD $20.7195
≥500 USD $20.0716
≥1000 USD $19.4237

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Packaging Cut Tape (CT)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity NPN
Power - Max 200mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 15V
hFE Min 70
Resistor - Base (R1) 47 kOhms
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 22 kOhms

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini

Compliance

RoHS Status RoHS Compliant

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