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MUN2132T1
ON SemiconductorRoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Tape & Reel (TR) Surface Mount PNP - Pre-Biased Single Pre-Biased Bipolar Transistor (BJT) 15 @ 5mA 10V 100mA 230mW 50V
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Inventory: 9523
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.5776
≥1 USD $0.5776
≥10 USD $0.47405
≥100 USD $0.45885
≥500 USD $0.44365
≥1000 USD $0.4294
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Technical
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 230mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 15
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 4.7 k Ω
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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