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MUN5334DW1T1G
ON SemiconductorRoHS
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Package 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS PREBIAS NPN/PNP SOT363
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Inventory: 2990
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥30 USD $0.66025
≥100 USD $0.6384
≥500 USD $0.6175
≥1000 USD $0.55385
Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 2.14
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN53**DW1
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 187mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 22k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Alternative Model
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