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MUN5313DW1T1
ON SemiconductorRoHS
/
Package 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS PREBIAS NPN/PNP SOT363
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Inventory: 9134
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.4978
≥1 USD $0.4978
≥10 USD $0.4085
≥100 USD $0.39615
≥500 USD $0.38285
≥1000 USD $0.3705
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MUN53**DW1
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 187mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 47k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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