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BCR22PNH6327XTSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 6-VSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R
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Inventory: 5326
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045
Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 800μm
Length 2mm
Width 1.25mm
Technical
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 250mW
Terminal Form GULL WING
Base Part Number BCR22PN
Reference Standard AEC-Q101
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 250mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 50V
Frequency - Transition 130MHz
hFE Min 50
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
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