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EMD12T2R
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS NPN/PNP PREBIAS 0.15W EMT6
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Inventory: 60
Minimum: 5
Total Price: USD $0.83
Unit Price: USD $0.16625
≥5 USD $0.16625
≥50 USD $0.1368
≥150 USD $0.13205
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3/e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN/TIN COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 30mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number MD12
Pin Count 6
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 68
Resistor - Base (R1) 47k Ω
Resistor - Emitter Base (R2) 47k Ω
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