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PEMD3,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS PREBIAS NPN/PNP SOT666
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Inventory: 3616
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 4.535924g
Dimensions
Height 600μm
Length 1.7mm
Width 1.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 300mW
Terminal Form FLAT
Base Part Number P*MD3
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 10V
hFE Min 30
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
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