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BCR35PNH6327XTSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 6-VSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R
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Inventory: 5270
Minimum: 1
Total Price: USD $0.04
Unit Price: USD $0.04085
≥1 USD $0.04085
≥200 USD $0.03325
≥500 USD $0.0323
≥1000 USD $0.03135

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6

Technical

Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCR35PN
Pin Count 6
Reference Standard AEC-Q101
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 50V
Frequency - Transition 150MHz
hFE Min 70
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 47k Ω

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 800μm
Length 2mm
Width 1.25mm

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