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PUMD10,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
PUMD10 - NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kO, R2 = 47 kO
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Inventory: 160
Minimum: 10
Total Price: USD $8.93
Unit Price: USD $0.893
≥10 USD $0.893
≥100 USD $0.7334
≥300 USD $0.7106
≥3000 USD $0.6878
≥6000 USD $0.66405
≥9000 USD $0.59565
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21
HTS Code 8541.21.00.95
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MD10
Pin Count 6
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Polarity NPN, PNP
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 230MHz
Frequency - Transition 230MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
Alternative Model
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