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RN4987FE,LF(CT
Toshiba Semiconductor and StorageRoHS 
RoHS compliant
RoHS compliantPackage SOT-563, SOT-666
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
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Inventory: 7195
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.068819
≥1 USD $0.068819
≥200 USD $0.02746
≥500 USD $0.026542
≥1000 USD $0.026088
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Technical
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity NPN, PNP
Number of Channels 2
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz 200MHz
Emitter Base Voltage (VEBO) -6V
hFE Min 80
Resistor - Base (R1) 10k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47k Ω
Compliance
RoHS Status RoHS Compliant
Alternative Model
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