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IPB60R950C6ATMA1
Infineon TechnologiesRoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
CoolMOS? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 4.4A Tc 4.4A 37W 13ns
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Inventory: 2894
Minimum: 1
Total Price: USD $0.91
Unit Price: USD $0.914705
≥1 USD $0.914705
≥10 USD $0.862923
≥100 USD $0.814074
≥500 USD $0.767995
≥1000 USD $0.724527
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series CoolMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 37W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 37W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.95Ohm
Avalanche Energy Rating (Eas) 46 mJ
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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