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DMP2038USS-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC
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Inventory: 8294
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Total Price: USD $0.23
Unit Price: USD $0.228819
≥1 USD $0.228819
≥10 USD $0.215862
≥100 USD $0.203645
≥500 USD $0.192115
≥1000 USD $0.181246

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Capacitance 1.496nF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1496pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 14.4nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35.5 ns
Turn-Off Delay Time 79.1 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 8V
Pulsed Drain Current-Max (IDM) 25A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 26 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

MUN2111T1G
ON Semiconductor

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