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ZXMP3F36N8TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Diodes Inc ZXMP3F36N8TA P-channel MOSFET Transistor, 12.6 A, 30 V, 8-Pin SOIC
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Inventory: 3656
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 2
Power Dissipation-Max 1.56W Ta
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Turn On Delay Time 3.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2265pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Gate Charge (Qg) (Max) @ Vgs 43.9nC @ 15V
Rise Time 5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 9.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Alternative Model

NTA4153NT3G
ON Semiconductor

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