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IRFD113
Vishay SiliconixRoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 800mA Tc 800mA 1W Tc 60V
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Inventory: 8924
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥200 USD $0.2204
≥500 USD $0.21375
≥1000 USD $0.2071
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-PDIP-T2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 800mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 800mA
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 0.8Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 25 pF
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
No data
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