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IRFD9123
Vishay SiliconixRoHS
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Package 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole P-Channel Single Mosfet Transistor 1A Ta 1A 1.3W -100V
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Inventory: 4875
Minimum: 1
Total Price: USD $0.66
Unit Price: USD $0.659214
≥1 USD $0.659214
≥10 USD $0.621891
≥100 USD $0.586696
≥500 USD $0.553482
≥1000 USD $0.522154
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Weight 639.990485mg
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 1.3W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Reach Compliance Code unknown
Pin Count 4
JESD-30 Code R-PDIP-T3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 1A
JEDEC-95 Code TO-250AA
Gate to Source Voltage (Vgs) 4V
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage -100V
Alternative Model
No data
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