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IPA65R099C6XKSA1
Infineon TechnologiesRoHS
/
Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
CoolMOS? Tube Through Hole N-Channel Mosfet Transistor 38A Tc 38A 35W 6ns
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Inventory: 1945
Minimum: 1
Total Price: USD $4.18
Unit Price: USD $4.180364
≥1 USD $4.180364
≥10 USD $3.94374
≥100 USD $3.720507
≥500 USD $3.509913
≥1000 USD $3.311241
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection ISOLATED
Turn On Delay Time 10.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 12.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 100V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 127nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 38A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.099Ohm
Avalanche Energy Rating (Eas) 845 mJ
Alternative Model
No data
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