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BUK9523-75A,127
NXP USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 53A TO220AB
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Inventory: 8088
Minimum: 1
Total Price: USD $3.56
Unit Price: USD $3.556055
≥1 USD $3.556055
≥10 USD $3.354768
≥100 USD $3.164882
≥500 USD $2.985737
≥1000 USD $2.816735
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 138W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±10V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 53A
Drain-source On Resistance-Max 0.026Ohm
Pulsed Drain Current-Max (IDM) 213A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 120 mJ
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